Datasheet

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Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
Vishay Siliconix
SUD23N06-31
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.6
0.9
1.2
1.5
1.8
2.1
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V
V
GS
=10V
I
D
=15A
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
0.00
0.02
0.04
0.06
0.08
012345678 910
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V )
0
100
200
300
400
500
011100.00.01
Time (s)
Power (W)
0.1
Source-Drain Diode Forward Voltage
Threshold Voltage
Single Pulse Power, Junction-to-Case
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= - 50 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=1mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
100
1
0.1 1 10 100
0.01
10
0.1
T
C
= 25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
100 ms, DC
10 µs
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D