Datasheet

Vishay Siliconix
SUD23N06-31
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
www.vishay.com
1
N-Channel 60 V (D-S), MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A)
a
Q
g
(Typ.)
60
0.031 at V
GS
= 10 V 9.1
6.5 nC
0.045 at V
GS
= 4.5 V 7.6
TO-252
SGD
Top View
Drain Connected to Tab
Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface mounted on 1" x 1" FR4 board, t  10 s.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
21.4
A
T
C
= 70 °C 17.1
T
A
= 25 °C
9.1
a
T
A
= 70 °C
7.6
a
Pulsed Drain Current
I
DM
50
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
20.8
T
A
= 25 °C
3.8
a
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
20
Avalanche Energy E
AS
20
mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
31.25
W
T
C
= 70 °C
20
T
A
= 25 °C
5.7
a
T
A
= 70 °C
3.6
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t  10 s
R
thJA
18 22
°C/W
Maximum Junction-to-Case
Steady State
R
thJC
3.2 4.0