Datasheet
Vishay Siliconix
SUD06N10-225L-GE3
Document Number: 62831
S13-0193-Rev. A, 28-Jan-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0
3
6
9
12
15
02468 10
3 V, 2 V
V
GS
= 10 V thru 5 V
4 V
0
3
6
9
12
15
0 3 6 9 12 15
-
Transconductance (S)g
fs
T
C
= - 55 °C
25 °C
125 °C
I
D
- Drain Current (A)
0
50
100
150
200
250
300
350
0 20406080100
V
DS
- Drain-to-Source Voltage (V)
C
- Capacitance (pF)
C
oss
C
iss
C
rss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
3
6
9
12
15
012345
125 °C
T
C
= - 55 °C
25 °C
- On-Resistance (Ω)
I
D
- Drain Current (A)
R
DS(on)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 3 6 9 12 15
V
GS
= 10 V
V
GS
= 4.5 V
-
Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
2
4
6
8
10
012345
V
DS
= 50 V
I
D
= 6.5 A