Datasheet

SSA23L, SSA24
www.vishay.com
Vishay General Semiconductor
Revision: 28-Apr-14
1
Document Number: 88882
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High Current Density Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
30 V, 40 V
I
FSM
60 A
E
AS
11.25 mJ
V
F
0.38 V, 0.42 V
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variations Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SSA23L SSA24 UNIT
Device marking code 23L S24 V
Maximum repetitive peak reverse voltage V
RRM
30 40 V
Maximum RMS voltage V
RMS
21 28 V
Maximum DC blocking voltage V
DC
30 40 V
Maximum average forward rectified currentat T
L
(fig. 1) I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single halfsine-wave
superimposed on rated load
I
FSM
60 A
Non-repetitive avalanche energy at T
A
= 25 °C, I
AS
= 1.5 A, L = 10 mH E
AS
11.25 mJ
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-65 to +150 °C
Storage temperature range T
STG
-65 to +150 °C