Datasheet

SS8P3C, SS8P4C
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Vishay General Semiconductor
Revision: 13-Jan-15
3
Document Number: 89029
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
2
4
6
8
10
0 25 50 75 100 125 150 175
Average Forward Current (A)
Lead Temperature (°C)
Resistive or Inductive Load
T
L
measured
at the Cathode Band Terminal
0
0.8
0.4
1.2
1.6
2.0
2.4
01 23 45
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
0.01
0.1
1
10
100
0.20.1 0.30 0.4 0.5 0.6 0.7 0.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 6050 70 9080 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
10
1000
100
0.1 1 10 100
Reverse Voltage (V)
Junc
tion Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Ambient