Datasheet

SS22, SS23, SS24, SS25, SS26
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Vishay General Semiconductor
Revision: 04-Aug-15
1
Document Number: 88748
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Surface Mount Schottky Barrier Rectifier
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
20 V, 30 V, 40 V, 50 V, 60 V
I
FSM
75 A
V
F
0.50 V, 0.70 V
T
J
max. 150 °C
Package DO-214AA
Diode variations Single
DO-214AA (SMB)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SS22 SS23 SS24 SS25 SS26 UNIT
Device marking code S2 S3 S4 S5 S6
Maximum repetitive peak reverse voltage V
RRM
20 30 40 50 60 V
Maximum RMS voltage V
RMS
14 21 28 35 42 V
Maximum DC blocking voltage V
DC
20 30 40 50 60 V
Max. average forward rectified current at T
L
(fig. 1) I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
75 A
Non-repetitive avalanche energy at T
A
= 25 °C,
I
AS
= 2.0 A, L = 10 mH
E
AS
20 mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
V
C
8.0 kV
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-65 to +150 °C
Storage temperature range T
STG
-65 to +150 °C