Datasheet

SS10P3, SS10P4
www.vishay.com
Vishay General Semiconductor
Revision: 10-Dec-14
3
Document Number: 88983
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise specified)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
Lead Temperature (°C)
Average Forward Current (A)
Resistive or Inductive Load
T
L
measured
at the Cathode Band Terminal
Average Forward Current (A)
Average Power Loss (W)
024681012
0
1
2
3
4
5
6
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
100
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
1000
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Reverse Voltage (V)
Junction Capacitance (pF)
10 000
1000
100
0.1 1 10 100
Junction to Ambient
0.01 0.1 1 10 100
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)