Datasheet
SQM50034E
www.vishay.com
Vishay Siliconix
S18-1076-Rev. A, 22-Oct-2018
2
Document Number: 76971
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 60 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 3.0 3.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
μA
V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 300 μA
On-state drain current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 100 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 20 A - 0.0032 0.0039
V
GS
= 10 V I
D
= 20 A, T
J
= 125 °C - - 0.0062
V
GS
= 10 V I
D
= 20 A, T
J
= 175 °C - - 0.0075
Forward transconductance
b
g
fs
V
DS
= 15 V, I
D
= 20 A - 135 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 4841 6600
pF Output capacitance C
oss
- 2243 3100
Reverse transfer capacitance C
rss
-6085
Total gate charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 50 A
-5890
nC Gate-source charge
c
Q
gs
-24-
Gate-drain charge
c
Q
gd
-5-
Gate resistance R
g
f = 1 MHz 0.6 1.26 1.9
Turn-on delay time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.6
I
D
50 A, V
GEN
= 10 V, R
g
= 1
-1930
ns
Rise time
c
t
r
-1020
Turn-off delay time
c
t
d(off)
-3050
Fall time
c
t
f
-815
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
- - 320 A
Forward voltage V
SD
I
F
= 25 A, V
GS
= 0 V - 0.83 1.5 V
Body diode reverse recovery time t
rr
I
F
= 30 A, di/dt = 100 A/μs
- 50 100 ns
Body diode reverse recovery charge Q
rr
- 55 110 nC
Reverse recovery fall time t
a
-24-
ns
Reverse recovery rise time t
b
-26-
Body diode peak reverse recovery current I
RM(REC)
--1.92- A