Datasheet

SQM50034E
www.vishay.com
Vishay Siliconix
S18-1076-Rev. A, 22-Oct-2018
1
Document Number: 76971
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• 100 % R
g
and UIS tested
• AEC-Q101 qualified
• Material categorization: 
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width  300 μs, duty cycle  2 %
c. When mounted on 1" square PCB (FR4 material)
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
() at V
GS
= 10 V 0.0039
I
D
(A) 100
Configuration Single
Package TO-263
TO-263
Top View
G
D
S
G
D
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
60
V
Gate-source voltage V
GS
± 20
Continuous drain current
T
C
= 25 °C
a
I
D
100
A
T
C
= 125 °C 80
Continuous source current (diode conduction)
a
I
S
100
Pulsed drain current
b
I
DM
320
Single pulse avalanche current
L = 0.1 mH
I
AS
50
Single pulse avalanche energy E
AS
125 mJ
Maximum power dissipation
b
T
C
= 25 °C
P
D
150
W
T
C
= 125 °C 50
Operating junction and storage temperature range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
c
R
thJA
40
°C/W
Junction-to-case (drain) R
thJC
1