Datasheet

SQM40041EL
www.vishay.com
Vishay Siliconix
S18-1269-Rev. A, 24-Dec-2018
4
Document Number: 77450
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TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 25 A
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0.000
0.004
0.008
0.012
0.016
0.020
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.01
0.1
1
10
100
0.00 0.25 0.50 0.75 1.00 1.25
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
-0.6
-0.2
0.2
0.6
1.0
1.4
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
- Variance (V)
T
J
- Junction Temperature (°C)
I
D
= 5 mA
I
D
= 250 μA
10
100
1000
10000
-53
-51
-49
-47
-45
-43
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA