Datasheet

SQM40041EL
www.vishay.com
Vishay Siliconix
S18-1269-Rev. A, 24-Dec-2018
2
Document Number: 77450
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0, I
D
= -250 μA -40 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 - -2.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= -40 V - - -1
μA V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C - - -250
On-state drain current
a
I
D(on)
V
GS
= -10 V V
DS
 -5 V -50 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -25 A - 0.00283 0.00340

V
GS
= -10 V I
D
= -25 A, T
J
= 125 °C - - 0.00520
V
GS
= -10 V I
D
= -25 A, T
J
= 175 °C - - 0.00620
V
GS
= -4.5 V I
D
= -20 A - 0.00400 0.00480
Forward transconductance
a
g
fs
V
DS
= -15 V, I
D
= -25 A - 92 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz
- 17 027 23 600
pF Output capacitance C
oss
- 1487 2100
Reverse transfer capacitance C
rss
- 1079 1500
Total gate charge
c
Q
g
V
GS
= -10 V V
DS
= -20 V, I
D
= -60 A
- 288 450
nC Gate-source charge
c
Q
gs
-66-
Gate-drain charge
c
Q
gd
-52-
Gate resistance R
g
f = 1 MHz 1.3 2.65 4 
Turn-on delay time
c
t
d(on)
V
DD
= -20 V, R
L
= 0.33 
I
D
 -60 A, V
GEN
= -10 V, R
g
= 1 
-1830
ns
Rise time
c
t
r
-2040
Turn-off delay time
c
t
d(off)
- 155 300
Fall time
c
t
f
- 135 250
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
---315A
Forward voltage V
SD
I
F
= -50 A, V
GS
= 0 V - -0.85 -1.5 V
Body diode reverse recovery time t
rr
I
F
= -50 A, di/dt = 100 A/μs
-3370ns
Body diode reverse recovery charge Q
rr
-2960nC
Reverse recovery fall time t
a
-18-
ns
Reverse recovery rise time t
b
-15-
Body diode peak reverse recovery current I
RM(REC)
--1.7- A