Datasheet

SQM120N04-1m7L
www.vishay.com
Vishay Siliconix
S12-1847-Rev. D, 30-Jul-12
3
Document Number: 65729
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TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
48
96
144
192
240
0 3 6 9 12 15
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 3 V
V
GS
= 2 V
0
80
160
240
320
400
0 14 28 42 56 70
g
fs
-Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
3000
6000
9000
12 000
15 000
0 8 16 24 32 40
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
40
80
120
160
200
0 1 2 3 4 5 6
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0.000
0.001
0.002
0.003
0.004
0.005
0 20 40 60 80 100 120
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 40 80 120 160 200
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
I
D
= 20 A
V
GS
= 20 V