Datasheet
SQM120N04-1m7L
www.vishay.com
Vishay Siliconix
S12-1847-Rev. D, 30-Jul-12
2
Document Number: 65729
For technical questions, contact: automostechsupport@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 40 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 40 V - - 1
μA
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C - - 150
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C - - 5 mA
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 120 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 30 A - 0.0014 0.0017
V
GS
= 10 V I
D
= 30 A, T
J
= 125 °C - - 0.0028
V
GS
= 10 V I
D
= 30 A, T
J
= 175 °C - - 0.0034
V
GS
= 4.5 V I
D
= 20 A - 0.0015 0.0020
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A - 212 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 20 V, f = 1 MHz
- 11 685 14 606
pF Output Capacitance C
oss
- 1652 2065
Reverse Transfer Capacitance C
rss
- 726 908
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 20 A
- 190 285
nC Gate-Source Charge
c
Q
gs
-29-
Gate-Drain Charge
c
Q
gd
-27-
Gate Resistance
R
g
f = 1 MHz 0.5 1.07 1.7
Turn-On Delay Time
c
t
d(on)
V
DD
= 20 V, R
L
= 1
I
D
20 A, V
GEN
= 10 V, R
g
= 1
-1523
ns
Rise Time
c
t
r
-1015
Turn-Off Delay Time
c
t
d(off)
- 74 110
Fall Time
c
t
f
-1218
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 480 A
Forward Voltage V
SD
I
F
= 60 A, V
GS
= 0 V - 0.8 1.5 V