Datasheet
SQJA38EP
www.vishay.com
Vishay Siliconix
S19-0023-Rev. B, 14-Jan-2019
2
Document Number: 77332
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0, I
D
= 250 μA 40 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.4 1.9 2.4
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 40 V - - 1
μA V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C - - 300
On-state drain current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 20 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 4.5 V I
D
= 8 A - 0.0040 0.0048
V
GS
= 10 V I
D
= 10 A - 0.0032 0.0039
V
GS
= 10 V I
D
= 10 A, T
J
= 125 °C - - 0.0057
V
GS
= 10 V I
D
= 10 A, T
J
= 175 °C - - 0.0067
Forward transconductance
b
g
fs
V
DS
= 15 V, I
D
= 10 A - 51 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 2839 3900
pF Output capacitance C
oss
- 888 1250
Reverse transfer capacitance C
rss
-2740
Total gate charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 1 A
-48.275
nC Gate-source charge
c
Q
gs
-7.1-
Gate-drain charge
c
Q
gd
-8-
Gate resistance R
g
f = 1 MHz 0.55 1.10 1.65
Turn-on delay time
c
t
d(on)
V
DD
= 20 V, R
L
= 20
I
D
1 A, V
GEN
= 10 V, R
g
= 1
-1425
ns
Rise time
c
t
r
-510
Turn-off delay time
c
t
d(off)
-3555
Fall time
c
t
f
-5790
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
--220A
Forward voltage V
SD
I
F
= 10 A, V
GS
= 0 - 0.76 1.2 V
Body diode reverse recovery time t
rr
I
F
= 1 A, di/dt = 100 A/μs
-3980ns
Body diode reverse recovery charge Q
rr
-4695nC
Reverse recovery fall time t
a
-23-
ns
Reverse recovery rise time t
b
-16-
Body diode peak reverse recovery current I
RM(REC)
--2.1- A