Datasheet
SQJ208EP
www.vishay.com
Vishay Siliconix
S19-0037-Rev. B, 21-Jan-2019
2
Document Number: 77836
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SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA N-Ch 1 40 - -
V
V
GS
= 0 V, I
D
= 250 μA N-Ch 2 40 - -
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA N-Ch 1 1.3 1.8 2.3
V
DS
= V
GS
, I
D
= 250 μA N-Ch 2 1.4 1.9 2.4
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch 1 - - ± 100
nA
N-Ch 2 - - ± 100
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 40 V N-Ch 1 - - 1
μA
V
GS
= 0 V V
DS
= 40 V N-Ch 2 - - 1
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C N-Ch 1 - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 125 °C N-Ch 2 - - 50
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C N-Ch 1 - - 250
V
GS
= 0 V V
DS
= 40 V, T
J
= 175 °C N-Ch 2 - - 300
On-state drain current
a
I
D(on)
V
GS
= 10 V V
DS
5 V N-Ch 1 10 - -
A
V
GS
= 10 V V
DS
5 V N-Ch 2 20 - -
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 6 A N-Ch 1 - 0.00770 0.00940
V
GS
= 10 V I
D
= 10 A N-Ch 2 - 0.00320 0.00390
V
GS
= 10 V I
D
= 6 A, T
J
= 125 °C N-Ch 1 - - 0.01370
V
GS
= 10 V I
D
= 10 A, T
J
= 125 °C N-Ch 2 - - 0.00570
V
GS
= 10 V I
D
= 6 A, T
J
= 175 °C N-Ch 1 - - 0.01600
V
GS
= 10 V I
D
= 10 A, T
J
= 175 °C N-Ch 2 - - 0.00670
V
GS
= 4.5 V I
D
= 4 A N-Ch 1 - 0.00970 0.01173
V
GS
= 4.5 V I
D
= 8 A N-Ch 2 - 0.00400 0.00480
Forward transconductance
b
g
fs
V
DS
= 15 V, I
D
= 6 A N-Ch 1 - 32 -
S
V
DS
= 15 V, I
D
= 10 A N-Ch 2 - 51 -
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 1 - 1197 1700
pF
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 2 - 2839 3900
Output capacitance C
oss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 1 - 331 500
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 2 - 888 1250
Reverse transfer capacitance C
rss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 1 - 31 50
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz N-Ch 2 - 27 40
Total gate charge
c
Q
g
V
GS
= 10 V V
DS
= 20 V, I
D
= 1 A N-Ch 1 - 22 33
nC
V
GS
= 10 V V
DS
= 20 V, I
D
= 1 A N-Ch 2 - 48.2 75
Gate-source charge
c
Q
gs
V
GS
= 10 V V
DS
= 20 V, I
D
= 1 A N-Ch 1 - 3.5 -
V
GS
= 10 V V
DS
= 20 V, I
D
= 1 A N-Ch 2 - 7.1 -
Gate-drain charge
c
Q
gd
V
GS
= 10 V V
DS
= 20 V, I
D
= 1 A N-Ch 1 - 3.9 -
V
GS
= 10 V V
DS
= 20 V, I
D
= 1 A N-Ch 2 - 8 -
Gate resistance R
g
f = 1 MHz
N-Ch 1 1.74 3.49 5.30
N-Ch 2 0.55 1.10 1.65