Datasheet

SQD40020E
www.vishay.com
Vishay Siliconix
S19-0002-Rev. A, 07-Jan-2019
4
Document Number: 76909
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TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Safe Operating Area
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1000
10000
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 20 A
V
GS
= 10 V
10
100
1000
10000
0.000
0.003
0.006
0.009
0.012
0.015
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
46
48
50
52
54
56
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
-1.8
-1.3
-0.8
-0.3
0.2
0.7
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
- Variance (V)
T
J
- Junction Temperature (°C)
I
D
= 5 mA
I
D
= 250 μA
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
I
DM
limited
T
C
= 25 °C,
single pulse
Limited by R
DS(on)
a
BVDSS limited
10 ms
100 ms, 1 s,
10 s, DC
1 ms
100 μs
I
D
limited