Datasheet

SQ3456BEV
www.vishay.com
Vishay Siliconix
S12-1848-Rev. B, 30-Jul-12
3
Document Number: 67934
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
8
16
24
32
40
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
0
6
12
18
24
30
0.0 1.2 2.4 3.6 4.8 6.0
g
fs
-Transconductance (S)
I
D
-Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
100
200
300
400
500
0 6 12 18 24 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
8
16
24
32
40
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0.00
0.03
0.06
0.09
0.12
0.15
0 8 16 24 32 40
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 2 4 6 8 10
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 15 V
I
D
= 6 A