Datasheet
SQ3456BEV
www.vishay.com
Vishay Siliconix
S12-1848-Rev. B, 30-Jul-12
2
Document Number: 67934
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
30 - -
V
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA
1.5 2.0 2.5
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
- - ± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V V
DS
= 30 V
--1
μA
V
GS
= 0 V V
DS
= 30 V, T
J
= 125 °C
--50
V
GS
= 0 V V
DS
= 30 V, T
J
= 175 °C
- - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V
10 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 6 A
- 0.028 0.035
V
GS
= 4.5 V I
D
= 4.9 A
- 0.036 0.052
V
GS
= 10 V I
D
= 6 A, T
J
= 125 °C
- - 0.054
V
GS
= 10 V I
D
= 6 A, T
J
= 175 °C
- - 0.064
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 5 A
-21-S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V V
DS
= 15 V, f = 1 MHz
- 295 370
pF Output Capacitance
C
oss
-6785
Reverse Transfer Capacitance
C
rss
-2535
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 15 V, I
D
= 6 A
-610
nC
Gate-Source Charge
c
Q
gs
-1.2-
Gate-Drain Charge
c
Q
gd
-1-
Gate Resistance
R
g
f = 1 MHz 3.0 6.65 11
Turn-On Delay Time
c
t
d(on)
V
DD
= 15 V, R
L
= 2.5
I
D
6 A, V
GEN
= 10 V, R
g
= 1
-69
ns
Rise Time
c
t
r
-1218
Turn-Off Delay Time
c
t
d(off)
-1320
Fall Time
c
t
f
-812
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--31A
Forward Voltage
V
SD
I
F
= 3 A, V
GS
= 0 V
-0.81.1V