Datasheet

SQ3456BEV
www.vishay.com
Vishay Siliconix
S12-1848-Rev. B, 30-Jul-12
1
Document Number: 67934
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
•TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
•100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V)
30
R
DS(on)
() at V
GS
= 10 V
0.035
R
DS(on)
() at V
GS
= 4.5 V
0.052
I
D
(A)
7.8
Configuration Single
N-Channel MOSFET
(3) G
(1, 2, 5, 6) D
(4) S
TSOP-6
Top V iew
6
4
1
2
3
5
2.85 mm
3 mm
Marking Code: 8Lxxx
ORDERING INFORMATION
Package TSOP-6
Lead (Pb)-free and Halogen-free SQ3456BEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
7.8
A
T
C
= 125 °C
4.5
Continuous Source Current (Diode Conduction)
I
S
5
Pulsed Drain Current
a
I
DM
31
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
10
Single Pulse Avalanche Energy
E
AS
5mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
4
W
T
C
= 125 °C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient
PCB Mount
b
R
thJA
110
°C/W
Junction-to-Foot (Drain)
R
thJF
38