Datasheet

SQ1922AEEH
www.vishay.com
Vishay Siliconix
S18-1111-Rev. A, 12-Nov-2018
4
Document Number: 76699
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
10
100
1000
10000
0
0.9
1.8
2.7
3.6
4.5
0 0.3 0.6 0.9 1.2
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 1.2 A
V
DS
= 10 V
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 1 A
V
GS
= 3.3 V
V
GS
= 4.5 V
10
100
1000
10000
0
0.18
0.36
0.54
0.72
2345
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
100
1000
10000
21
22
23
24
25
26
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
-0.7
-0.5
-0.3
-0.1
0.1
0.3
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
V
GS(th)
- Variance (V)
T
J
- Junction Temperature (°C)
I
D
= 5 mA
I
D
= 250 μA