Datasheet
SQ1922AEEH
www.vishay.com
Vishay Siliconix
S18-1111-Rev. A, 12-Nov-2018
2
Document Number: 76699
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
d. Gate is obscured by ESD network series resistance and cannot be tested directly
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0, I
D
= 250 μA 20 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2 2.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 3 V - - ± 1 μA
V
DS
= 0 V, V
GS
= ± 12 V - - ± 10 mA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= 20 V - - 1
μA V
GS
= 0 V V
DS
= 20 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 20 V, T
J
= 175 °C - - 150
On-state drain current
a
I
D(on)
V
GS
= 4.5 V V
DS
5 V 0.4 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 4.5 V I
D
= 0.4 A - 0.210 0.300
V
GS
= 4.5 V I
D
= 0.4 A, T
J
= 125 °C - - 0.490
V
GS
= 4.5 V I
D
= 0.4 A, T
J
= 175°C - - 0.530
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= 10 V, f = 1 MHz
-60-
pF Output capacitance C
oss
-26-
Reverse transfer capacitance C
rss
-15-
Total gate charge
c
Q
g
V
GS
= 4.5 V V
DS
= 10 V, I
D
= 1.2 A
-0.91.2
nC Gate-source charge
c
Q
gs
-0.5-
Gate-drain charge
c
Q
gd
-0.3-
Gate resistance
d
R
g
f = 1 MHz 5 8.5 13.5
Turn-on delay time
c
t
d(on)
V
DD
= 10 V, R
L
= 20
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 1
-1015
ns
Rise time
c
t
r
-9.615
Turn-off delay time
c
t
d(off)
-812
Fall time
c
t
f
-610
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
--3A
Forward voltage V
SD
I
F
= 0.5 A, V
GS
= 0 - 0.8 1.2 V