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ManualsBrandsVishay ManualsDiscrete SemiconductorsAutomotive MOSFET Dual N-Channel 20V SC-70

SQ1922AEEH

www.vishay.com

Vishay Siliconix

S18-1111-Rev. A, 12-Nov-2018

Document Number: 76699

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET

Marking Code: 8T

FEATURES

• TrenchFET

power MOSFET

• AEC-Q101 qualified

• 100 % R

tested

• Typical ESD protection: 800 V

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited

b. Pulse test; pulse width  300 μs, duty cycle  2 %

c. When mounted on 1" square PCB (FR4 material)

PRODUCT SUMMARY

(V) 20

DS(on)

() at V

= 4.5 V 0.300

(A) per leg 0.85

Configuration Dual

Package SC-70

SOT-363

SC-70 Dual (6 leads)

Top View

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

Gate-source voltage V

± 12

Continuous drain current

= 25 °C

0.85

= 125 °C 0.53

Continuous source current (diode conduction)

0.63

Pulsed drain current

3.3

Single Pulse Avalanche Current

L = 0.1 mH

Single Pulse Avalanche Energy E

0.2 mJ

Maximum power dissipation

= 25 °C

1.5

= 125 °C 0.5

Operating junction and storage temperature range T

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-ambient PCB mount

thJA

460

°C/W

Junction-to-foot (drain) R

thJF

350

Summary of content (17 pages)

PAGE 1
SQ1922AEEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V (D-S) 175 °C MOSFET FEATURES SOT-363 SC-70 Dual (6 leads) G2 5 D1 6 • TrenchFET® power MOSFET S2 4 • AEC-Q101 qualified • 100 % Rg tested • Typical ESD protection: 800 V 1 S1 Top View 2 G1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 D2 D1 D2 Marking Code: 8T G1 G2 PRODUCT SUMMARY VDS (V) 20 RDS(on) () at VGS = 4.5 V 0.300 ID (A) per leg 0.
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SQ1922AEEH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage VDS VGS = 0, ID = 250 μA 20 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.
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SQ1922AEEH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 8 1000 10000 10000 VGS = 6 V VGS = 4.5 V 4 VGS = 4 V 2 100 100 1000 Ciss 1st line 2nd line 1000 2nd line C - Capacitance (pF) VGS = 5 V 1st line 2nd line 2nd line ID - Drain Current (A) VGS = 5.5 V 6 Coss 10 100 Crss VGS = 3.5 V VGS = 3 V VGS = 2.5 to 1 V 0 1 10 0 0.5 1 1.5 2 2.
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SQ1922AEEH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 26 1000 2.7 1.8 100 0.9 0 0.3 0.6 0.9 ID = 1 mA 25 1000 24 23 100 22 21 10 0 10000 1st line 2nd line ID = 1.2 A VDS = 10 V 3.6 2nd line VDS - Drain-to-Source Voltage (V) 10000 1st line 2nd line 1.2 10 -50 -25 0 25 TJ - Junction Temperature (°C) Gate Charge Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 10000 10000 ID = 1 A 1.
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SQ1922AEEH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10 10000 IDM limited Limited by RDS(on) a 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 μs 1 1 ms 10 ms 0.1 100 100 ms BVDSS limited TC = 25 °C, single pulse 0.01 0.01 1 s, 10 s, DC 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a.
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SQ1922AEEH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.
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Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.
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AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package.
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AN814 Vishay Siliconix SC-70 (6-PIN) PD + Dual EVB Elevated Ambient 60 _C TJ(max) * TA Rq JA o o PD + 150 Co* 25 C 400 CńW PD + 312 mW PD + TJ(max) * TA Rq JA o o PD + 150 Co* 60 C 400 CńW PD + 225 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W.
PAGE 10
AN816 Vishay Siliconix Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance INTRODUCTION 87 (mil) 26 (mil) The new dual 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes. These devices are intended for small to medium load applications where a miniaturized package is required.
PAGE 11
AN816 Vishay Siliconix Front of Board SC70-6 Back of Board SC70-6 S1 D1 G1 G2 D2 S2 vishay.com SC70−6 DUAL FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) COOPER LEADFRAME Room Ambient 25 _C Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the drain lead of the device as it connects with the body.
PAGE 12
AN816 500 500 400 400 Thermal Resistance (C/W) Thermal Resistance (C/W) Vishay Siliconix 300 Alloy 42 200 Copper 100 300 Alloy 42 200 100 Copper 0 0 10-5 10-4 10-3 10-2 10-1 1 10 100 1000 10-5 Dual SC70-6 Thermal Performance on EVB Document Number: 71405 12-Dec-03 10-3 10-2 10-1 1 10 100 1000 Time (Secs) Time (Secs) FIGURE 4. 10-4 FIGURE 5. Dual SC70-6 Comparison on 1-inch2 PCB www.vishay.
PAGE 13
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.
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VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN917 Dual-Channel LITTLE FOOT ® 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part INTRODUCTION The new dual 6-pin SC-70 package with a copper leadframe enables improved on-resistance values and enhanced thermal performance as compared to the existing 3-pin and 6-pin packages with Alloy 42 leadframes.
PAGE 15
Application Note AN917 www.vishay.com Vishay Siliconix Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part Front of Board SC70-6 Back of Board SC70-6 S1 D1 G1 G2 D2 S2 vishay.com SC70−6 DUAL Fig.
PAGE 16
Application Note AN917 www.vishay.com Vishay Siliconix Dual-Channel LITTLE FOOT® 6-Pin SC-70 MOSFET Copper Leadframe Version Recommended Pad Pattern and Thermal Performance 175 °C Rated Part Dual: Sx19xxEDH or Sx19xxEEH Compl.
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