Datasheet

SQ1431EH
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Vishay Siliconix
S11-2128 Rev. B, 31-Oct-11
4
Document Number: 67048
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TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 1 2 3 4 5
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
I
D
= 2.2 A
V
DS
= 15 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
-0.3
-0.1
0.1
0.3
0.5
0.7
- 50 - 25 0 25 50 75 100 125 150 175
V
GS(th)
Variance (V)
T
J
-Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 2 A
V
GS
= 4.5 V
V
GS
= 10 V
0.0
0.2
0.4
0.6
0.8
1.0
0246810
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
-36
-35
-34
-33
-32
-31
-30
-29
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
-Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA