Datasheet

SL22, SL23
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-14
1
Document Number: 88741
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
FEATURES
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Very low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
20 V, 30 V
I
FSM
100 A
V
F
0.32 V
T
J
max. 125 °C
Package DO-214AA
Diode variations Single
DO-214AA (SMB)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SL22 SL23 UNIT
Device marking code SL2 SL3
Maximum repetitive peak reverse voltage V
RRM
20 30 V
Maximum RMS voltage V
RMS
14 21 V
Maximum DC blocking voltage V
DC
20 30 V
Maximum average forward rectified current at T
L
(fig.1) I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction temperature range T
J
-55 to +125 °C
Storage temperature range T
STG
-55 to +150 °C

Summary of content (4 pages)