Datasheet

SL04
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 28-Mar-18
2
Document Number: 85942
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Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Forward Characteristics
Fig. 2 - Typical Diode Capacitance vs. Reverse Voltage
Fig. 3 - Typical Reverse Characteristics
Fig. 4 - Forward Current Derating Curve
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 0.5 A
T
J
= 25 °C
V
F
(1)
0.41 0.47
V
I
F
= 1.1 A 0.48 0.54
I
F
= 0.5 A
T
J
= 100 °C
0.34 -
I
F
= 1.1 A 0.43 -
I
F
= 0.5 A
T
J
= 125 °C
0.31 -
I
F
= 1.1 A 0.42 -
Reverse current V
R
= 40 V
T
J
= 25 °C
I
R
10 20 μA
T
J
= 100 °C 1.2 2.6 mA
T
J
= 125 °C 4.5 13 mA
Typical junction capacitance V
R
= 4.0 V, 1 MHz C
D
65 - pF
0.001
0.01
0.1
1
10
0.00 0.20 0.40 0.60 0.80 1.00 1.20
I
F
[A]
V
F
[V]
typical at 25 °C
typical at 100 °C
typical at 125 °C
typical at 150 °C
0
20
40
60
80
100
120
140
160
180
200
0.1 1 10 100
C
D
[pF]
V
R
[V]
f = 1 MHz
100.0E-9
1.0E-6
10.0E-6
100.0E-6
1.0E-3
10.0E-3
100.0E-3
1.0E+0
010203040
I
R
[A]
V
R
[V]
T
J
at 25 °C T
J
at 75 °C
T
J
at 100 °C T
J
at 125 °C
T
J
at 150 °C T
J
at 175 °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150 175
Average Forward Current [A]
Lead Temperature (°C)
R
thJL
= 22K/W
R
thJA
= 180K/W