Datasheet

SiZF920DT
www.vishay.com
Vishay Siliconix
S18-1125 Rev. A, 12-Nov-2018
9
Document Number: 79595
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CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
-1
10
0
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
100
1000
10000
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
I
R
(A)
T
J
- Junction Temperature (°C)
V
R
= 30 V
V
R
= 10 V
10
100
1000
10000
0
0.001
0.002
0.003
0.004
0.005
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
10
100
1000
10000
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
P - Power (W)
t - Time (s)
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
I
DM
limited
T
A
= 25 °C,
single pulse
Limited by R
DS(on)
a
BVDSS limited
10 ms
1 s
1 ms
100 μs
I
D(ON)
limited
DC
100 ms
10 s