Datasheet

SiZF920DT
www.vishay.com
Vishay Siliconix
S18-1125 Rev. A, 12-Nov-2018
4
Document Number: 79595
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CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
30
60
90
120
0 0.5 1.0 1.5 2.0 2.5 3.0
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
10
100
1000
10000
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0 306090120
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 5 10 15 20
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 10 A
V
DS
= 15 V
V
DS
= 24 V
V
DS
= 7.5 V
10
100
1000
10000
0
30
60
90
120
00.511.522.533.54
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
0
500
1000
1500
2000
0 5 10 15 20 25 30
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
-50-25 0 255075100125150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 10 A
V
GS
= 10 V
V
GS
= 4.5 V