Datasheet
SiZF920DT
www.vishay.com
Vishay Siliconix
S18-1125 Rev. A, 12-Nov-2018
3
Document Number: 79595
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Notes
a. Guaranteed by design, not subject to production testing
b. Pulse test; pulse width 300 μs, duty cycle 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic
a
Turn-on delay time t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1 - 18 35
ns
Ch-2 - 34 70
Rise time t
r
Ch-1 - 95 190
Ch-2 - 116 230
Turn-off delay time t
d(off)
Ch-1 - 17 35
Ch-2 - 45 90
Fall time t
f
Ch-1 - 10 20
Ch-2 - 27 50
Turn-on delay time t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 3
I
D
5 A, V
GEN
= 10 V, R
g
= 1
Ch-1 - 11 20
Ch-2 - 17 35
Rise time t
r
Ch-1 - 5 10
Ch-2 - 70 150
Turn-off delay time t
d(off)
Ch-1 - 20 40
Ch-2 - 43 85
Fall time t
f
Ch-1 - 5 10
Ch-2 - 10 20
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C
Ch-1 - - 26
A
Ch-2 - - 122
Pulse diode forward current
a
I
SM
Ch-1 - - 130
Ch-2 - - 130
Body diode voltage V
SD
I
S
= 10 A, V
GS
= 0 V Ch-1 - 0.77 1.1
V
I
S
= 3 A, V
GS
= 0 V Ch-2 - 0.36 0.60
Body diode reverse recovery time t
rr
Channel-1
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
Channel-2
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
Ch-1 - 27 50
ns
Ch-2 - 55 110
Body diode reverse recovery charge Q
rr
Ch-1 - 15 30
nC
Ch-2 - 66 130
Reverse recovery fall time t
a
Ch-1 - 16 -
ns
Ch-2 - 30 -
Reverse recovery rise time t
b
Ch-1 - 11 -
Ch-2 - 25 -
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT