Datasheet
SiZF920DT
www.vishay.com
Vishay Siliconix
S18-1125 Rev. A, 12-Nov-2018
2
Document Number: 79595
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SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA
Ch-1 30 - -
V
Ch-2 30 - -
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA
Ch-1 1.1 - 2.4
Ch-2 1.1 - 2.2
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= +20 V, -16 V Ch-1 - - ± 100
nA
V
DS
= 0 V, V
GS
= +16 V, -12 V Ch-2 - - ± 100
Zero Gate voltage drain current I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 - - 1
μA
Ch-2 - 60 400
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
Ch-1 - - 5
Ch-2 - 350 4000
On-state drain current
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
Ch-1 20 - -
A
Ch-2 20 - -
Drain-source on-state resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 10 A Ch-1 - 0.00230 0.00307
V
GS
= 10 V, I
D
= 10 A Ch-2 - 0.00070 0.00105
V
GS
= 4.5 V, I
D
= 5 A Ch-1 - 0.00380 0.00530
V
GS
= 4.5 V, I
D
= 5 A Ch-2 - 0.00095 0.00145
Forward transconductance
b
g
fs
V
DS
= 15 V, I
D
= 25 A Ch-1 - 65 -
S
V
DS
= 15 V, I
D
= 25 A Ch-2 135 -
Dynamic
a
Input capacitance C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1 - 1300 -
pF
Ch-2 - 5230 -
Output capacitance C
oss
Ch-1 - 700 -
Ch-2 - 2920 -
Reverse transfer capacitance C
rss
Ch-1 - 35 -
Ch-2 - 360 -
C
rss
/C
iss
ratio
Ch-1 - 0.027 0.054
Ch-2 0.069 0.140
Total gate charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
Ch-1 - 19 29
nC
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
Ch-2 - 83 125
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Ch-1 9 14
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A Ch-2 - 38.6 58
Gate-source charge Q
gs
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
Ch-1 - 4.4 -
Ch-2 - 17 -
Gate-drain charge Q
gd
Ch-1 - 2 -
Ch-2 - 9.2 -
Output charge Q
oss
V
DS
= 15 V, V
GS
= 0 V
Ch-1 - 17 -
Ch-2 - 46 -
Gate resistance R
g
f = 1 MHz
Ch-1 0.2 1 2
Ch-2 0.1 0.4 0.8