Datasheet

SiUD401ED
www.vishay.com
Vishay Siliconix
S18-1126-Rev. A, 12-Nov-2018
5
Document Number: 77595
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient
Current Derating
b, c
Power, Junction-to-Ambient
c
Notes
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
b. The power dissipation P
D
is based on T
J
max. = 25 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
c. When mounted on 1" x 1" FR4 with full copper
10
100
1000
10000
0.01
0.1
1
0.01 0.1 1 10 100
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
I
DM
limited
T
A
= 25 °C,
single pulse
Limited by R
DS(on)
a
BVDSS limited
10 ms
DC
1 ms
100 μs
I
D(ON)
limited
100 ms, 1 s, 10 s
10
100
1000
10000
0
0.2
0.4
0.6
0.8
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
T
A
- Ambient Temperature (°C)
Package limited
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1.0
1.2
0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
P - Power (W)
T
A
- Ambient Temperature (°C)