Datasheet

SiUD401ED
www.vishay.com
Vishay Siliconix
S18-1126-Rev. A, 12-Nov-2018
4
Document Number: 77595
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
100
1000
10000
0
2
4
6
8
10
0 0.3 0.6 0.9 1.2 1.5
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 0.2 A
V
DS
= 15 V
V
DS
= 24 V
V
DS
= 7.5 V
10
100
1000
10000
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0.8
0.9
1.0
1.1
1.2
1.3
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
V
GS(th)
-(V)
T
J
- Junction Temperature (°C)
I
D
= 250 μA
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 0.2 A
V
GS
= 4.5 V
V
GS
= 10 V
V
GS
= 2.5 V
10
100
1000
10000
0
3
6
9
12
15
012345
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
10
100
1000
10000
0
1
2
3
4
0.0001 0.001 0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
P - Power (W)
t - Time (s)