Datasheet

SiUD401ED
www.vishay.com
Vishay Siliconix
S18-1126-Rev. A, 12-Nov-2018
3
Document Number: 77595
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
10
100
1000
10000
0
0.4
0.8
1.2
1.6
2.0
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
I
GSS
- Gate Current (mA)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1.0 1.5 2.0 2.5 3.0
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 5 V thru 4 V
V
GS
= 3 V
V
GS
= 2.5 V
V
GS
= 1 V
V
GS
= 2 V
V
GS
= 10 V
10
100
1000
10000
0
1.000
2.000
3.000
4.000
5.000
0 0.2 0.4 0.6 0.8 1
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
10
-03
10
-02
0 4 8 12 16 20
Axis Title
1st line
2nd line
2nd line
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0
0.2
0.4
0.6
0.8
1
01234
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
0
10
20
30
40
50
60
0 5 10 15 20 25 30
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss