Datasheet
SiUD401ED
www.vishay.com
Vishay Siliconix
S18-1126-Rev. A, 12-Nov-2018
2
Document Number: 77595
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
f. Package limited
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -30 - - V
V
DS
temperature coefficient V
DS
/T
J
I
D
= -250 μA
- -22.1 -
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
-2-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.6 - -1.4 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V - - ± 0.5
μA
V
DS
= 0 V, V
GS
= ± 12 V - - ± 15
Zero gate voltage drain current I
DSS
V
DS
= -30 V, V
GS
= 0 V - - -1
μA
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C - - -10
On-state drain current
a
I
D(on)
V
DS
-5 V, V
GS
= 0 V -0.5 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -0.2 A - 1.230 1.573
V
GS
= -4.5 V, I
D
= -0.1 A - 1.480 1.850
V
GS
= -2.5 V, I
D
= -0.1 A - 2.150 3.500
Forward transconductance
a
g
fs
V
DS
= -10 V, I
D
= -0.4 A - 0.65 - S
Dynamic
b
Input capacitance C
iss
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
-33-
pFOutput capacitance C
oss
-5.6-
Reverse transfer capacitance C
rss
-3.3-
Total gate charge Q
g
V
DS
= -15 V, V
GS
= -10 V, I
D
= -0.2 A - 1.3 2
nC
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -0.2 A - 0.44 0.70
Gate-source charge Q
gs
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -0.2 A
-0.13-
Gate-drain charge Q
gd
-0.16-
Gate resistance R
g
f = 1 MHz 14 70 140
Turn-on delay time t
d(on)
V
DD
= -15 V, R
L
= 75 , I
D
-0.2 A,
V
GEN
= -4.5 V, R
g
= 1
-1120
ns
Rise time t
r
-1020
Turn-off delay time t
d(off)
-1735
Fall time t
f
-510
Turn-on delay time t
d(on)
V
DD
= -15 V, R
L
= 75 , I
D
-0.2 A,
V
GEN
= -12 V, R
g
= 1
-510
Rise time t
r
-510
Turn-off delay time t
d(off)
-1530
Fall time t
f
-510
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
A
= 25 °C - - -0.5
c
A
Pulse diode forward current I
SM
---1
Body diode voltage V
SD
I
S
= -0.2 A, V
GS
= 0 V - -0.9 -1.2 V
Body diode reverse recovery time t
rr
I
F
= -0.2 A, di/dt = 100 A/μs,
T
J
= 25 °C
-1530ns
Body diode reverse recovery charge Q
rr
-1020nC
Reverse recovery fall time t
a
-10-
ns
Reverse recovery rise time t
b
-5-