Datasheet

SiSS73DN
www.vishay.com
Vishay Siliconix
S19-0116-Rev. A, 04-Feb-2019
3
Document Number: 76969
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
6
12
18
24
30
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V, 9 V, 8 V
V
GS
= 7 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4 V, 3 V
10
100
1000
10000
0
0.060
0.120
0.180
0.240
0.300
0 6 12 18 24 30
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 7.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
03691215
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 10 A
V
DS
= 50 V, 75 V, 100 V
10
100
1000
10000
0
6
12
18
24
30
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
1
10
100
1000
10 000
0 306090120150
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.5
0.8
1.1
1.4
1.7
2.0
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 7.5 V, 10 A
V
GS
= 10 V, 10 A