Datasheet

SiSS61DN
www.vishay.com
Vishay Siliconix
S18-1163-Rev. A, 26-Nov-2018
3
Document Number: 75322
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
40
80
120
160
200
012345
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= -5 V thru -2.5 V
V
GS
= -1.5 V
V
GS
= -2 V
10
100
1000
10000
0
0.004
0.008
0.012
0.016
0.020
0 20406080100
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance ( )
I
D
- Drain Current (A)
V
GS
= -1.8 V
V
GS
= -4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 50 100 150 200
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 30.9 A
V
DS
= 5 V, 10 V, 16 V
10
100
1000
10000
0
30
60
90
120
150
0 0.6 1.2 1.8 2.4 3.0
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
100
1000
10 000
100 000
048121620
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= -1.8 V, -5 A
V
GS
= -4.5 V, -30.9 A