Datasheet

SiSS60DN
www.vishay.com
Vishay Siliconix
S19-0106-Rev. A, 04-Feb-2019
4
Document Number: 77036
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
Note
a. V
GS
> minimum V
GS
at which R
DS(on)
is specified
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0
Axis Title
1st line
2nd line
2nd line
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
0
0.001
0.002
0.003
0.004
0.005
0246810
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 20 A
10
100
1000
10000
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0255075100125150
Axis Title
1st line
2nd line
I
R
- Reverse Current (A)
T
J
- Junction Temperature (°C)
20 V
30 V
10 V
10
100
1000
10000
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10
Axis Title
1st line
2nd line
2nd line
Power (W)
Time (s)
2nd line
10
100
1000
10000
0.001
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
I
DM
limited
T
A
= 25 °C,
single pulse
Limited by R
DS(on)
a
BVDSS limited
1 ms
100 μs
DC
100 ms
10 ms
10 s, 1 s