Datasheet
SiSS60DN
www.vishay.com
Vishay Siliconix
S19-0106-Rev. A, 04-Feb-2019
2
Document Number: 77036
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - - V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1 - 2.5 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= +16 V / -12 V - - 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 300 μA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 70 °C - - 5 mA
On-state drain current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V 20 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A - 0.00109 0.00131
V
GS
= 4.5 V, I
D
= 15 A - 0.00155 0.00201
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A - 84 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
- 3960 -
pFOutput capacitance C
oss
- 1785 -
Reverse transfer capacitance C
rss
- 142 -
Total gate charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 50.1 A - 57 85.5
nCV
DS
= 15 V, V
GS
= 4.5 V, I
D
= 50.1 A
- 25.9 38.9
Gate-source charge Q
gs
- 12.6 -
Gate-drain charge Q
gd
-5.6-
Output charge Q
oss
V
DS
= 15 V, V
GS
= 0 V - 46 69
Gate resistance R
g
f = 1 MHz 0.12 0.6 1.2
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 0.374 , I
D
40.1 A,
V
GEN
= 10 V, R
g
= 1
-1836
ns
Rise time t
r
-714
Turn-off delay time t
d(off)
-3060
Fall time t
f
-612
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 0.374 , I
D
40.1 A,
V
GEN
= 4.5 V, R
g
= 1
-3060
Rise time t
r
- 265 530
Turn-off delay time t
d(off)
-4080
Fall time t
f
-1836
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C - - 97.5
A
Pulse diode forward current I
SM
- - 200
Body diode voltage V
SD
I
S
= 10 A, V
GS
= 0 V - 0.45 0.68 V
Body diode reverse recovery time t
rr
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
-4590ns
Body diode reverse recovery charge Q
rr
-4386nC
Reverse recovery fall time t
a
-22-
ns
Reverse recovery rise time t
b
-23-