Datasheet
SiSS05DN
www.vishay.com
Vishay Siliconix
S19-0237-Rev. A, 18-Mar-2019
2
Document Number: 77029
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -30 - - V
V
DS
temperature coefficient V
DS
/T
J
I
D
= -10 mA - -13 -
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
I
D
= -250 μA - 6.5 -
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA -1 - -2.2 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= +16 / -20 V - - 100 nA
Zero gate voltage drain current I
DSS
V
DS
= -30 V, V
GS
= 0 V - - -1
μA
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70 °C - - -15
On-state drain current
a
I
D(on)
V
DS
-10 V, V
GS
= -10 V -40 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -10 A - 0.00280 0.00350
V
GS
= -4.5 V, I
D
= -10 A - 0.00465 0.00580
Forward transconductance
a
g
fs
V
DS
= -15 V, I
D
= -10 A - 53 - S
Dynamic
b
Input capacitance C
iss
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
- 4930 -
pFOutput capacitance C
oss
- 2100 -
Reverse transfer capacitance C
rss
- 140 -
Total gate charge Q
g
V
DS
= -15 V, V
GS
= -10 V, I
D
= -10 A
- 76 115
nC
V
DS
= -15 V, V
GS
= -4.5 V, I
D
=-10 A
-3756
Gate-source charge Q
gs
- 15.8 -
Gate-drain charge Q
gd
-12-
Gate resistance R
g
f = 1 MHz 1 3 5
Turn-on delay time t
d(on)
V
DD
= -15 V, R
L
= 1.5 , I
D
-10 A,
V
GEN
= -10 V, R
g
= 1
-1632
ns
Rise time t
r
-1530
Turn-off delay time t
d(off)
-4794
Fall time t
f
-1326
Turn-on delay time t
d(on)
V
DD
= -15 V, R
L
= 1.5 , I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
-4080
Rise time t
r
- 117 234
Turn-off delay time t
d(off)
-3978
Fall time t
f
-2652
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C
- - -59.7
A
Pulse diode forward current I
SM
- - -300
Body diode voltage V
SD
I
S
= -5 A, V
GS
= 0 V
- -0.73 -1.1 V
Body diode reverse recovery time t
rr
I
F
= -10 A, di/dt = 100 A/μs,
T
J
= 25 °C
-4794ns
Body diode reverse recovery charge Q
rr
-4590nC
Reverse recovery fall time t
a
-24-
ns
Reverse recovery rise time t
b
-23-