Datasheet

SiSS05DN
www.vishay.com
Vishay Siliconix
S19-0237-Rev. A, 18-Mar-2019
1
Document Number: 77029
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV p-channel power MOSFET
• Provides exceptionally low R
DS(on)
in a compact
package that is thermally enhanced
• Enables higher power density
• 100 % R
g
and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Battery management in mobile devices
• Adapter and charger switch
• Circuit protection
•Load switch
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 63 °C/W
g. T
C
= 25 °C
PRODUCT SUMMARY
V
DS
(V) -30
R
DS(on)
max. () at V
GS
= 10 V 0.0035
R
DS(on)
max. () at V
GS
= 4.5 V 0.0058
Q
g
typ. (nC) 37
I
D
(A)
g
-108
Configuration Single
PowerPAK
®
1212-8S
Top View
1
3.3 mm
3.3 mm
1
3.3
mm
3.3
mm
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package PowerPAK 1212-8S
Lead (Pb)-free and halogen-free SiSS05DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-30
V
Gate-source voltage V
GS
+16 / -20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
-108
A
T
C
= 70 °C -86.6
T
A
= 25 °C -29.4
b, c
T
A
= 70 °C -23.9
b, c
Pulsed drain current (t = 100 μs) I
DM
-300
Continuous source-drain diode current
T
C
= 25 °C
I
S
-59.7
T
A
= 25 °C -4.5
b, c
Single pulse avalanche current
L = 0.1 mH
I
AS
-25
Single pulse avalanche energy E
AS
31.2 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
65.7
W
T
C
= 70 °C 42
T
A
= 25 °C 5
b, c
T
A
= 70 °C 3.2
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
b
t  10 s R
thJA
20 25
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
1.5 1.9