Datasheet
SiSHA14DN
www.vishay.com
Vishay Siliconix
S18-1180-Rev. A, 26-Nov-2018
2
Document Number: 75708
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Guaranteed by design
b. Pulse test; pulse width 300 μs, duty cycle 2 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - - V
V
DS
temperature coefficient V
DS
/T
J
I
D
= 250 μA
-20-
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
--4.5-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.1 - 2.2 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= +20 V / -16 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 1
μA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-state drain current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 10 A - 0.00425 0.00510
V
GS
= 4.5 V, I
D
= 8 A - 0.00680 0.00850
Forward transconductance
a
g
fs
V
DS
= 10 V, V
GS
= 10 V - 65 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
- 1450 -
pFOutput capacitance C
oss
- 445 -
Reverse transfer capacitance C
rss
-38-
Total gate charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 15 A
- 19.4 29
nC
V
DS
= 15 V, V
GS
= 0 V to 4.5 V, I
D
= 15 A
-9.414
Gate-source charge Q
gs
-4-
Gate-drain charge Q
gd
-1.8-
Output charge Q
oss
V
DS
= 15 V, V
GS
= 0 V
- 12.5 -
Gate resistance R
g
f = 1 MHz 0.4 1.65 3.3
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
-918
ns
Rise time t
r
-816
Turn-off delay time t
d(off)
-1836
Fall time t
f
-816
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
-1530
Rise time t
r
-1224
Turn-off delay time t
d(off)
-1836
Fall time t
f
-918
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C
- - 14.1
A
Pulse diode forward current I
SM
--80
Body diode voltage V
SD
I
S
= 5 A
- 0.76 1.1 V
Body diode reverse recovery time t
rr
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
-2448ns
Body diode reverse recovery charge Q
rr
-1428nC
Reverse recovery fall time t
a
-12-
ns
Reverse recovery rise time t
b
-12-