Datasheet

SiSHA10DN
www.vishay.com
Vishay Siliconix
S18-1251-Rev. A, 24-Dec-2018
3
Document Number: 76822
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
10
20
30
40
50
60
70
80
0 0.5 1.0 1.5 2.0
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
10
100
1000
10000
0.0020
0.0025
0.0030
0.0035
0.0040
0.0045
0.0050
0 1020304050607080
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0 7 14 21 28 35
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 10 A
V
DS
= 7.5 V
V
DS
= 15 V
V
DS
= 24 V
10
100
1000
10000
0
4
8
12
16
20
0 0.51.01.52.02.53.03.5
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
= -55 °C
10
100
1000
10000
0
600
1200
1800
2400
3000
0 5 10 15 20 25 30
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
Axis Title
1st line
2nd line
2nd line
R
DS(on)
- On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 10 A
V
GS
= 4.5 V
V
GS
= 10 V