Datasheet

SiSHA04DN
www.vishay.com
Vishay Siliconix
S18-1178-Rev. A, 26-Nov-2018
1
Document Number: 76879
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Switch mode power supplies
• Personal computers and servers
• Telecom bricks
•VRM’s and POL
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 81 °C/W
f. Based on T
C
= 25 °C
g. Package limited
PRODUCT SUMMARY
V
DS
(V) 30
R
DS(on)
max. () at V
GS
= 10 V 0.00215
R
DS(on)
max. () at V
GS
= 4.5 V 0.00310
Q
g
typ. (nC) 22.5
I
D
(A) 40
g
Configuration Single
PowerPAK
®
1212-8SH
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Top View
1
3.3 mm
3.3 mm
0.9 mm
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiSHA04DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
30
V
Gate-source voltage V
GS
+20, -16
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
40
g
A
T
C
= 70 °C 40
g
T
A
= 25 °C 30.9
a, b
T
A
= 70 °C 28.3
a, b
Pulsed drain current (t = 300 μs) I
DM
80
Continuous source-drain diode current
T
C
= 25 °C
I
S
40
g
T
A
= 25 °C 3.3
a, b
Single pulse avalanche current
L = 0.1 mH
I
AS
20
Single pulse avalanche energy E
AS
20 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
52
W
T
C
= 70 °C 43
T
A
= 25 °C 3.7
a, b
T
A
= 70 °C 3.1
a, b
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
c, d
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a, e
t  10 s R
thJA
24 33
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
1.9 2.4