Datasheet

SiSH472DN
www.vishay.com
Vishay Siliconix
S18-1177-Rev. A, 26-Nov-2018
4
Document Number: 75656
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
= 25 °C
1.0
1.3
1.6
1.9
2.2
2.5
- 50 - 25 0 25 50 75 100 125 150
I
D
=250µA
V (V)
GS(th)
T
J
- Temperature (°C)
0.000
0.010
0.020
0.030
2345678910
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
=25 °C
T
J
= 125 °C
0
24
48
72
96
120
011100.00.01
Time (s)
Power (W)
0.1
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
C
= 25 °C
Single Pulse
10 ms
100 μs
1 s
DC
BVDSS Limited
10 s