Datasheet

SiSH472DN
www.vishay.com
Vishay Siliconix
S18-1177-Rev. A, 26-Nov-2018
3
Document Number: 75656
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
10
20
30
40
50
0.0 0.3 0.6 0.9 1.2 1.5
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
V
GS
=10Vthru5V
V
GS
=4V
0.006
0.009
0.012
0.015
0 1020304050
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
=4.5V
V
GS
=10V
0
2
4
6
8
10
0 3 6 9 12 15 18 21
I
D
= 15 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 24 V
V
DS
= 15 V
V
DS
=8 V
0
1
2
3
4
5
01234
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
C
rss
0
300
600
900
1200
1500
0 6 12 18 24 30
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
0.5
0.8
1.1
1.4
1.7
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
=4.5V
I
D
= 15 A
V
GS
=10V