Datasheet

SiSH407DN
www.vishay.com
Vishay Siliconix
S18-1176-Rev. A, 26-Nov-2018
4
Document Number: 75341
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TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)
I
S
- 0.8
- 0.7
- 0.6
- 0.5
- 0.4
- 0.3
- 0.2
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 μA
(V)V
GS(th)
T
J
- Temperature (°C)
0
0.01
0.02
0.03
02468
T
J
= 25 °C
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
=15.3A
0.01
0
1
40
50
10
600
Time (s)
30
20
Power (W)
0.1 10 100
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
100 ms
Limited by R
DS(on)
*
BVDSS Limited
1ms
100 μA
10 ms
10 s
DC
1 s
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
- Drain Current (A)
I
D