Datasheet

SiSH407DN
www.vishay.com
Vishay Siliconix
S18-1176-Rev. A, 26-Nov-2018
3
Document Number: 75341
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TYPICAL CHARACTERISTICS (T
J
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
10
20
30
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
=
5 V thru 2 V
V
GS
=1.8V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
=1.5V
V
GS
=1 V
0
0.006
0.012
0.018
0.024
0.03
0 10 20 30 40
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 1.8 V
V
GS
= 2.5 V
0
2
4
6
8
0 1530456075
I
D
= 15.3 A
V
DS
=10V
V
DS
=5V
V
DS
=16V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
2
4
6
8
10
0.0 0.4 0.8 1.2 1.6
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
0
1000
2000
3000
4000
5000
0 5 10 15 20
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 15.3 A
V
GS
=2.5V
V
GS
=4.5V
T
J
- Junction Temperature (°C)
(Normalized)- On-Resistance
R
DS(on)