Datasheet

SiSH407DN
www.vishay.com
Vishay Siliconix
S18-1176-Rev. A, 26-Nov-2018
1
Document Number: 75341
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Low thermal resistance PowerPAK
®
package
with small size and low 0.9 mm profile
• 100 % R
g
and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
•Load switch
• Battery switch
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 81 °C/W
f. Package limited
g. T
C
= 25 °C
PRODUCT SUMMARY
V
DS
(V) -20
R
DS(on)
max. () at V
GS
= -4.5 V 0.0095
R
DS(on)
max. () at V
GS
= -2.5 V 0.0138
R
DS(on)
max. () at V
GS
= -1.8 V 0.0195
Q
g
typ. (nC) 38
I
D
(A) -25
f, g
Configuration Single
PowerPAK
®
1212-8SH
Bottom View
D
8
D
7
D
6
D
5
1
S
2
S
3
S
4
G
Top View
1
3.3 mm
3.3 mm
0.9 mm
S
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package PowerPAK 1212-8
Lead (Pb)-free and halogen-free SiSH407DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-20
V
Gate-source voltage V
GS
± 8
Continuous drain current (T
J
= 150 °C)
a
T
C
= 25 °C
I
D
-25
f
A
T
C
= 70 °C -25
f
T
A
= 25 °C -15.4
a, b
T
A
= 70 °C -12.3
a, b
Pulsed drain current I
DM
-40
Continuous source-drain diode current
T
C
= 25 °C
I
S
-25
f
T
A
= 70 °C -3
a, b
Avalanche current L = 0.1 mH I
AS
-20
Single pulse avalanche energy E
AS
20 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
33
W
T
C
= 70 °C 21
T
A
= 25 °C 3.6
a, b
T
A
= 70 °C 2.3
a, b
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
b, c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a, e
t  10 s R
thJA
28 35
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
2.9 3.8