Datasheet

SiSH114ADN
www.vishay.com
Vishay Siliconix
S18-1166-Rev. A, 26-Nov-2018
4
Document Number: 75172
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 150 °C
T
J
= 25 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.8
1.1
1.4
1.7
2.0
2.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
0.000
0.005
0.010
0.015
0.020
048121620
T
J
=25 °C
T
J
= 125 °C
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
10
20
30
40
50
60
Power (W)
Time (s)
10 10000.10.010.001 1001
100
1
0.1 1 10 100
0.01
10
0.1
T
A
=25 °C
Single Pulse
1s,10s
BVDSS Limited
1ms
100 µs
10 ms
DC
100 ms
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Limited by R
DS(on)
*