Datasheet

SiSH114ADN
www.vishay.com
Vishay Siliconix
S18-1166-Rev. A, 26-Nov-2018
3
Document Number: 75172
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
15
30
45
60
0246810
V
GS
=10thru4V
V
GS
=3V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
0.003
0.006
0.009
0.012
0 20406080100
V
GS
=10V
V
GS
=4.5V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
0
2
4
6
8
10
04812162024
V
DS
=24V
I
D
=18A
V
DS
=15V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0
1
2
3
4
0.0 0.6 1.2 1.8 2.4 3.0
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
C
rss
0
400
800
1200
1600
0 6 12 18 24 30
C
iss
C
oss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.9
1.2
1.5
1.8
- 50 - 25 0 25 50 75 100 125 150
V
GS
=4.5V
V
GS
=10V
I
D
=18A
T
J
- Junction Temperature (°C)
(Normalized)- On-ResistanceR
DS(on)