Datasheet
SiSH114ADN
www.vishay.com
Vishay Siliconix
S18-1166-Rev. A, 26-Nov-2018
2
Document Number: 75172
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Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 30 - - V
V
DS
temperature coefficient V
DS
/T
J
I
D
= 250 μA
-33-
mV/°C
V
GS(th)
temperature coefficient V
GS(th)
/T
J
--6-
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.2 - 2.5 V
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 30 V, V
GS
= 0 V - - 1
μA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C - - 5
Drain-source on-state resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 18 A - 0.0062 0.0075
V
GS
= 4.5 V, I
D
= 16 A - 0.0081 0.0098
Forward transconductance
a
g
fs
V
DS
= 15 V, I
D
= 18 A - 50 - S
Dynamic
b
Input capacitance C
iss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
- 1230 -
pFOutput capacitance C
oss
- 275 -
Reverse transfer capacitance C
rss
- 105 -
Total gate charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 19 A
-2132
nC
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 19 A
- 10.2 20
Gate-source charge Q
gs
-3.9-
Gate-drain charge Q
gd
-3.2-
Gate resistance R
g
f = 1 MHz 0.3 1.6 3.2
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
-2030
ns
Rise time t
r
-1421
Turn-off delay time t
d(off)
-2030
Fall time t
f
-1020
Turn-on delay time t
d(on)
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
-1120
Rise time t
r
-816
Turn-off delay time t
d(off)
-2030
Fall time t
f
-714
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
T
C
= 25 °C
--32
A
Pulse diode forward current I
SM
--60
Body diode voltage V
SD
I
S
= 10 A, V
GS
= 0 V
-0.81.2V
Body diode reverse recovery time t
rr
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
-2436ns
Body diode reverse recovery charge Q
rr
-2030nC
Reverse recovery fall time t
a
-16-
ns
Reverse recovery rise time t
b
-8-